Samsung doubling current phone storage speed with eUFS 3.0, now in production



Samsung will be launching 512GB and 128GB eUFS 3.0 solutions this month, followed by 1TB and 256GB products in the second half of the year. That chip can reach only up to 1,000Mbps of sequential read speed and up to 260Mbps of sequential write speeds. Theoretically the new storage facilitates the transfer of a 3.7GB movie file in a little over three seconds.

The new Samsung 512GB eUFS 3.0 part is created by stacking eight of the company's fifth-generation 512Gb V-NAND dies and integrating a high-performance controller. We know this because Samsung has started mass product what it claims is the industry's first 512-gigabyte embedded Universal Flash Storage (eUFS) 3.0 for next-gen mobile devices. Samsung says the 512GB memory can hit read speeds up to 2,100 megabytes per second compared with 1,000MB/sec of the 1TB flash; sequential write can hit 410MB/sec versus 260MB/sec.

"As we expand our eUFS 3.0 offerings, including a 1TB version later this year, we expect to play a major role in accelerating momentum within the premium mobile market". The company's executive vice President of Memory Sales and Marketing at Samsung Electronics went even further and said that the new standard is finally capable of reaching today's ultra-slim laptops when it comes to storage performance. For comparison, that's about 630 times faster than microSD cards.

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United Kingdom company Integral Memory has just announced the world's highest capacity microSD card. That large data storage, the largest among phones, is already on the eUFS 2.1 standard that is faster than most internal smartphone memory these days.

Think of all the Nintendo Switch games this baby can hold.

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